Tunable Interlayer Exciton Electroluminescence by Layer and Twist Engineering

Interlayer excitons (I X ) in transition metal dichalcogenide heterostructures hold great promise for next‐generation silicon photonics and quantum telecommunications, owing to their distinct emission in the near‐infrared spectral range. However, due to the inherent complexities associated with device fabrication and carrier injection, most of the research has been limited to photoluminescence (PL) studies, with the realization and effective modulation of I X electroluminescence (EL) remaining largely unexplored. This study presents a comprehensive investigation into the tunable EL of MoSe 2 /WSe 2 heterostructures via synergistic layer thickness and twist‐angle engineering. By increasing the WSe 2 layer thickness from monolayer to trilayer, a continuous spectral tuning of the EL is achieved, accompanied by a corresponding enhancement in both the exciton lifetime and the ‐factor, a behavior attributed to the increased spatial separation of electron–hole wavefunctions and modified band hybridization. Furthermore, twist‐angle engineering of the MoSe 2 /WSe 2 reveals that the I X EL can also be effectively modulated by the twist angle, dictated by the momentum‐space alignment between the constituent layers. This work establishes a robust strategy for the precise electrical manipulation of I X , paving the way for the development of highly tunable, chip‐integrated near‐infrared light sources and magneto‐optic devices.