Flexible optoelectronic memristor with photo-enhanced resistive switching for low-light visual perception

Flexible neuromorphic visual systems require high-performance optoelectronic memristors with robust mechanical flexibility and stability. Conventional perovskite memristors suffer from poor film quality, disordered ion migration, and non-uniform resistive switching. Here, a flexible memristor based on CsPbBrI2 perovskite quantum dots:graphene oxide (GO) composite is fabricated to overcome these drawbacks. GO passivates surface defects and regulates ion migration, yielding compact composite films with efficient photogenerated carrier separation. The device exhibits remarkable photo-modulated bipolar resistive switching with a greatly enhanced ON/OFF ratio, exceptional mechanical flexibility, and cycling stability. The optoelectronic synergy promotes uniform conductive filament formation and in situ insulating barrier generation, clarifying the intrinsic photo-enhanced resistive switching mechanism. Integrated into an in-sensor convolutional neural network, the device realizes efficient low-light visual enhancement with improved perceptual performance. This work provides a feasible strategy for high-performance flexible optoelectronic memristors, showing promising prospects in neuromorphic computing and low-light intelligent sensing.