What question did this study set out to answer?

To develop and evaluate a flexible, transparent resistive random-access memory device using a CsPbBr3 quantum dot and graphene oxide hybrid active layer regulated by both electric fields and light.

May 25, 2022Advanced Functional Materials

Flexible Transparent High‐Efficiency Photoelectric Perovskite Resistive Switching Memory

View Full Paper

Ask AI

Bookmark

To develop and evaluate a flexible, transparent resistive random-access memory device using a CsPbBr3 quantum dot and graphene oxide hybrid active layer regulated by both electric fields and light.
Fabricated a flexible transparent memory structure composed of Ag/CsPbBr3 quantum dots:graphene oxide/ITO.
Characterized electrical switching, SET/RESET voltages, and ON/OFF current ratios under both dark and illuminated conditions.
Evaluated mechanical durability across 10^4 bending cycles at a 5 mm radius.
Illumination elevated the ON/OFF ratio to ≈ 1.4 × 10^7, representing a 1077-fold increase compared to dark conditions (1.3 × 10^4).
Operating thresholds decreased with light exposure, shifting SET/RESET voltages from +2.28 V / −2.04 V in the dark to +1.68 V / −1.08 V under illumination.
Mechanical resilience tests showed preserved ON/OFF ratios after 10^4 bending cycles at a 5 mm radius, measuring 2.3 × 10^7 under light and 2.9 × 10^4 in darkness.

Discussion

No takes yet. Share an insight, caveat, or question.

Implication

Experimental study demonstrates light- and electric-field-controlled switching in flexible perovskite quantum dot memory devices, highlighting potential for multifunctional nonvolatile electronics.

Cite This Study

Liu et al. (2022) studied this question.

synapsesocial.com/papers/6a01205a2ff633f365783d59 https://doi.org/10.1002/adfm.202202951

View Full Paper

Ask AI

Bookmark

Implication

Experimental study demonstrates light- and electric-field-controlled switching in flexible perovskite quantum dot memory devices, highlighting potential for multifunctional nonvolatile electronics.

Flexible Transparent High‐Efficiency Photoelectric Perovskite Resistive Switching Memory

Key Points

Discussion

Implication

Cite This Study

Flexible Transparent High‐Efficiency Photoelectric Perovskite Resistive Switching Memory

Key Points

Discussion

Implication

Cite This Study

Also Consider

Also Consider