Two-dimensional GaN/Si heterojunctions towards high-performance UV-B photodetectors

at 308 nm at 1 V, and a fast response speed with a rise/decay time of 1.3/1.1 ms, simultaneously. This work provides a resolution for high-performance UV-B PDs through the controllable growth of 2D GaN, and the proposed synthesis strategy significantly broadens the application prospects of 2D GaN in the field of UV optoelectronics.