Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi ₂ O ₂ Se

Cheng Chen; Meixiao Wang; Jinxiong Wu; Huixia Fu; Haifeng Yang; Zhen Tian; Teng Tu; Han Peng; Han Peng; Yan Sun; Xiang Xu; Juan Jiang; Niels B. M. Schröter; Yiwei Li; Ding Pei; Shuai Liu; Sandy Adhitia Ekahana; Hongtao Yuan; Jiamin Xue; Gang Li; Jinfeng Jia; Zhongkai Liu; Binghai Yan; Hailin Peng; Hailin Peng; Yulin Chen

doi:10.1126/sciadv.aat8355

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Abstract

Se and these oxides possible platforms for realizing novel physical phenomena, such as topological superconductivity, Josephson junction field-effect transistor, new superconducting optoelectronics, and novel lasers.

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Chen et al. (2018) studied this question.

synapsesocial.com/papers/6a612ae38791c6ab1cd07ac7 https://doi.org/10.1126/sciadv.aat8355

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Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi ₂ O ₂ Se

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Abstract

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Cite This Study

Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi ₂ O ₂ Se

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Abstract

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