Highly uniform InGaAs/GaAs quantum dots (∼15 nm) by metalorganic chemical vapor deposition

We report the direct deposition of strained InGaAs-dot structures with a diameter of about 15 nm on GaAs surfaces by metalorganic chemical vapor deposition growth. High resolution scanning electron micrographs show highly uniform quantum-sized dots formed by the Stranski–Krastanow growth mode. The sharp photoluminescence emission band of buried dot structures indicates efficient carrier capture and a homogeneous heterointerface. The average dot size and area dot density can be controlled accurately by growth temperature, and InGaAs deposition thickness, respectively.