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Zirconium acetylacetonate used as a co-precursor in the synthesis of CsPbI3 quantum dots (QDs) increased their photoluminescence quantum efficiency to values over 90%. The top-emitting device structure on a Si substrate with high thermal conductivity (to better dissipate Joule heat generated at high current density) was designed to improve the light extraction efficiency making use of a strong microcavity resonance between the bottom and top electrodes. As a result of these improvements, light-emitting diodes (LEDs) utilizing Zr-modified CsPbI3 QDs with an electroluminescence at 686 nm showed external quantum efficiency (EQE) of 13.7% at a current density of 108 mA cm–2, which was combined with low efficiency roll-off (maintaining an EQE of 12.5% at a high current density of 500 mA cm–2) and a high luminance of 14 725 cd m–2, and the stability of the devices being repeatedly lit (cycled on and off at high drive current density) has been greatly enhanced.
Lu et al. (Mon,) studied this question.