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Abstract Thermal quenching (TQ) of phosphor is one of the biggest challenges to develop high‐quality white light‐emitting diodes ( w ‐LEDs). Herein, an anti‐thermal‐quenching (anti‐TQ) property in cyan‐emitting Ba 2 ZnGe 2 O 7 :Bi 3+ phosphor is reported. At 150 °C, its emission intensity increases to 114% of the original intensity at 25 °C. Especially, the integrated emission intensity reaches 138%, 148%, and 134% at 150, 200, and 250 °C, respectively, by artificially creating zinc and oxygen vacancy defect. The anti‐TQ phenomenon is mainly attributed to high structure rigidity and strong ability to compensate emission loss during thermal generation process. Thermal‐induced emission compensation mainly stems from self‐oxidization behavior of Bi 2+ in zinc vacancy and the presence of oxygen vacancy defect. Oxygen vacancy is induced by native zinc vacancy and charge imbalance between Bi 3+ and Ba 2+ ions. The strategy to create oxygen vacancy defect and design self‐oxidization process of Bi opens a new insight to exploit anti‐TQ phosphors for high‐quality w ‐LEDs applications.
Wei et al. (Tue,) studied this question.