Ultrawide Charge‐Trap Memory Window and Photoinduced Synaptic Behavior in p ‐Channel Amorphous Oxide Semiconductors

The decades‐long absence of high‐performance p ‐type amorphous oxide semiconductors (AOSs) remains a critical bottleneck in complementary circuit development and has severely limited exploration of charge trapping phenomena essential for neuromorphic computing. Here, we achieve a transformative breakthrough by demonstrating a p ‐channel amorphous oxide semiconductor through ultraviolet–ozone oxidation of crystalline tellurium to amorphous tellurium trioxide (a‐TeO 3 ). This revolutionary material integrates transistor, nonvolatile memory, photodetection, and synaptic functions in a single device, achieving an unprecedented level of functional integration. The a‐TeO 3 channel exhibits an unprecedented ultrawide memory window exceeding 58 V under ambient conditions, driven by oxygen vacancy–adsorbate interactions that enable robust multilevel switching. Ultraviolet illumination induces persistent photocurrent through carrier trapping/detrapping, enabling light‐programmable synaptic plasticity and associative learning. Paired with monolayer molybdenum disulfide n ‐mode charge‐trap memory (CTM), antagonistic charge‐trap dynamics realize autonomous heating/cooling control and precise homeostasis. Hardware‐constrained networks built on these complementary synaptic transistors achieve MNIST accuracy comparable to ideal digital systems. This light‐reconfigurable p ‐ n platform overcomes a critical materials barrier, unlocking scalable, energy‐efficient neuromorphic architectures for edge artificial intelligence.