Key points are not available for this paper at this time.
In many power converter applications, particularly those with high variable loads, such as traction and wind power, condition monitoring of the power semiconductor devices in the converter is considered desirable. Monitoring the device junction temperature in such converters is an essential part of this process. In this paper, a method for measuring the insulated gate bipolar transistor (IGBT) junction temperature using the collector voltage dV / dt at turn-OFF is outlined. A theoretical closed-form expression for the dV / dt at turn-OFF is derived, closely agreeing with experimental measurements. The role of dV / dt in dynamic avalanche in high-voltage IGBTs is also discussed. Finally, the implications of the temperature dependence of the dV / dt are discussed, including implementation of such a temperature measurement technique.
Bryant et al. (Tue,) studied this question.