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The thermal conductivity of sputtered a-Si: H thin films for a hydrogen content of 1--20 % and a film thickness of 0. 2--1. 5 is determined in the temperature range 80--400 K using an extension of the 3 measurement technique. The reliability of the method is demonstrated on 1--thick a-SiO₂ thermally grown on Si. Scattering of phonons at the interface between the a-Si: H film and the substrate places a simple upper limit on the heat transport by long-wavelength phonons and facilitates the comparison of the experimental data to recent numerical solutions of a Kubo formula using harmonic vibrations.
Cahill et al. (Thu,) studied this question.