Defect photoluminescence from pulsed-laser-annealed ion-implanted Si

Low-temperature photoluminescence studies of pulsed-laser annealed self-ion-implanted Si are reported. Two sharp damage luminescence peaks W and G are found. The main peak W is strongest at a laser energy of 1.5 J/cm2 even though this gives good recrystallization of the amorphous surface region. Most of the W centers are created by solid-phase annealing of ion-implantation damage in a band beyond the laser-melted region. The G centers are present in the channeling tail of the implant before laser annealing.