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High-performance, solution-processable semiconductors have drawn significant attention for use in low-cost, functional electronic applications. Metal oxide semiconductors are the most promising building blocks for high performance electronic devices because of their electrical properties and solution-processability. However, the major impediment for metal oxide semiconductors is that the electrical properties applicable to electronic devices are activated by chemical/physical structural evolution at high temperatures, which critically limits the practical applications. This article reviews the recent progress in the development of high-performance oxide semiconductors processed at low temperatures which are compatible with plastic substrates and discusses the chemical/physical approaches to lower the annealing temperature.
Jeong et al. (Tue,) studied this question.