A unique insight into the atomic-scale removal on 6H-SiC

As one of the most promising and powerful next-generation semiconductor materials, single crystal silicon carbide (SiC) must possess exceptionally high surface and subsurface quality. Chemical mechanical polishing (CMP) is usually used as the final finishing step. In this letter, a novel removal mode on the C-face of 6H-SiC that was different from that on the Si-face is identified. For the first time, the underlying mechanism responsible for the difference in processing efficiency between the Si- and C-faces of 6H-SiC is thoroughly elucidated. The powerful capabilities of molecular dynamics simulations are once again demonstrated, and its potential in the field of material processing is further explored.