Investigation of Low-Frequency Noise Characteristics of Ferroelectric Tunnel Junction: From Conduction Mechanism and Scaling Perspectives

We investigate the effects of length ( <tex-math notation="LaTeX">L </tex-math> ) and width ( <tex-math notation="LaTeX">W </tex-math> ) scaling on the low-frequency noise characteristics of the ferroelectric tunnel junction (FTJ). The FTJ is composed of metal/ferroelectric/dielectric/semicondu- ctor (TiN/HfZrO 2 /SiO 2 / <tex-math notation="LaTeX">n⁺ </tex-math> Si). In the high-resistance state, 1/ <tex-math notation="LaTeX">f </tex-math> noise increases proportionally to 1/ <tex-math notation="LaTeX">WαLβ </tex-math> ( <tex-math notation="LaTeX">α ~1 </tex-math> , <tex-math notation="LaTeX">β >1 </tex-math> ), whereas the shot noise has no scaling dependence. In the low-resistance state, the 1/ <tex-math notation="LaTeX">f </tex-math> noise of the FTJ shows a more sensitive dependence on <tex-math notation="LaTeX">L </tex-math> scaling than <tex-math notation="LaTeX">W </tex-math> scaling since the switching and conduction mechanisms are more affected by the process-induced damaged edge regions.