Epitaxial GdSi1.7 layers have been produced by channeled ion beam synthesis. The crystalline quality improves with implant dose and substrate temperature. The latter determines the extent of dynamic annealing whereas both factors are instrumental in driving precipitate growth. This, in turn, promotes the formation of a continuous silicide layer following annealing. The information obtained in this study allows the production of high quality layers with a room temperature resistivity of 86 μΩ cm. Evidence of magnetic ordering is apparent below 44 K.
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Hogg et al. (2002) studied this question.
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