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Metal–amorphous-silicon Schottky barriers, similar to those used in thin-film amorphous-silicon solar cells, exhibit nearly ideal diode behavior in the dark. The current-voltage characteristics have been studied in the range from 270 to 370 °K and are found to be in agreement with the diffusion theory of metal-semiconductor rectification. Barrier heights, which were measured by two different methods, depend on the metal work function, and barriers as high as ∼1.1 eV are obtained with Pt films.
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Wroński et al. (1976) studied this question.
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