Modeling and Free Energy Loss Analysis of Wide Bandgap Semiconductor Schottky Barrier Diodes

This study evaluates and compares materials for Schottky barrier power diodes by free energy loss analysis (FELA) technique to reveal detailed material characteristics for power electronics applications. Wide band-gap (WBG) semiconductors of 4H-silicon carbide (SiC), gallium nitride (GaN), gallium oxide (Ga 2 O 3 ) and diamond were chosen. Before the FELA, I established simulation modelings that the experimental operations both on forward and reverse operations were well reproduced, including the physical topics of each WBG material that need attentions. On FELA s, it was found that wider bandgap energy enhanced recombination Joule loss due to minimized intrinsic carrier concentration and increased recombination volume, then temperature increment was expected to minimize recombination Joule loss.