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February 19, 2019IEEE Electron Device Letters

Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in p -GaN Gate HEMTs

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Authors

JWJin WeiPeking UniversityRXRuiliang XieHong Kong University of Science and TechnologyHXHan XuNankai University

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Cite This Study

Wei et al. (2019) studied this question.

synapsesocial.com/papers/6a62f8fe47366de40a286adehttps://doi.org/10.1109/led.2019.2900154
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