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January 1, 2018IEEE Electron Device Letters

VTH Instability of p-GaN Gate HEMTs under Static and Dynamic Gate Stress

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JHJiabei HeYunnan Normal UniversityGTGaofei TangCloud Computing CenterKCKevin J. ChenHong Kong University of Science and Technology

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Cite This Study

He et al. (2018) studied this question.

synapsesocial.com/papers/6a867649f5121d64a72eda94https://doi.org/10.1109/led.2018.2867938
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