ABSTRACT In integrated circuits at advanced technology nodes, cobalt/titanium (Co/Ti) interconnection heterostructures have become next‐generation interconnects due to their superior cohesive energy. However, significant physicochemical differences between Co and Ti cause complex corrosion and mismatched removal rates, hindering atomic‐level manufacturing during chemical mechanical polishing (CMP). This study creatively proposes a strategy for synchronously improving chemical corrosion and mechanical wear properties. Based on this strategy, an environmentally friendly polyvinylpyrrolidone (PVP)‐based slurry system is developed. This chemo‑mechanical strategy precisely controls the material removal rates of Co and Ti to approximately 5.4 and 6.5 Å min − 1 , respectively, and reduces surface roughness below 1 Å, achieving atomic‐scale synchronous polishing of Co/Ti interconnection heterostructures. Through a multiscale methodology integrating experimental characterization, density functional theory, and molecular dynamics, the multiple functional roles of PVP with varying polymerization degrees in the CMP process have been elucidated. The results demonstrate that PVP molecules adsorb onto Co/Ti surfaces via carbonyl bonds, preventing corrosion. Simultaneously, PVP interacts with silica abrasives to directly modulate mechanical action, achieving a balanced chemo‐mechanical contribution that minimizes surface damage. Beyond offering a scalable solution for next‐generation semiconductor manufacturing, this slurry system and its strategy provide theoretical guidance for the molecular design of CMP slurry.
Zhang et al. (Wed,) studied this question.