Role of secondary electrons in hot-electron femtochemistry at surfaces using tunnel junctions

A theory of resonance-assisted, hot-electron-induced femtochemical processing at surfaces using a tunnel junction device, which has previously been developed in terms of inelastic electron scattering via negative-molecular-ion shape resonances associated with molecules adsorbed on solid surfaces, is extended here to include the effects of secondary electron cascades produced within the device. The potential influence of the secondaries on the proposed control and selectivity of the device is demonstrated and assessed.