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A semiconductor laser with a strongly asymmetric waveguide structure and a relatively thick (~0.1 mum) active layer, resulting in an extremely large equivalent spot size, is proposed and analyzed for the purpose of generating high-power single-optical pulses by gain switching. An improvement in obtainable single-pulse energies of about an order of magnitude over conventional laser structures is predicted.
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Ryvkin et al. (2009) studied this question.
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