Halide ion (Cl ⁻ /Br ⁻ /I ⁻ ) aliovalently dopes on the Se ²⁻ sublattice and contributes one n-type carrier in AgBiSe ₂ , which gives rise to improved electronic transport properties. A peak ZT , value of ∼0.9 at ∼810 K has been achieved for the AgBiSe 1.98 Cl 0.02 sample, which makes it a promising n-type thermoelectric material for mid-temperature applications.
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Guin et al. (2014) studied this question.
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