Key points are not available for this paper at this time.
Halide ion (Cl − /Br − /I − ) aliovalently dopes on the Se 2− sublattice and contributes one n-type carrier in AgBiSe 2 , which gives rise to improved electronic transport properties. A peak ZT , value of ∼0.9 at ∼810 K has been achieved for the AgBiSe 1.98 Cl 0.02 sample, which makes it a promising n-type thermoelectric material for mid-temperature applications.
Guin et al. (Thu,) studied this question.