Heteroepitaxial ultrafine wire-like growth of InAs on GaAs substrates

We demonstrate heteroepitaxial ultrafine wire-like growth of InAs. Ultrafine InAs whiskers with diameters less than 20 nm are grown selectively on SiO2-patterned GaAs substrates using metalorganic vapor phase epitaxy. These InAs nanowhiskers grow epitaxially with a growth axis parallel to the 〈111〉As dangling bond direction of the GaAs substrate surface irrespective of substrate orientation.