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We demonstrate heteroepitaxial ultrafine wire-like growth of InAs. Ultrafine InAs whiskers with diameters less than 20 nm are grown selectively on SiO2-patterned GaAs substrates using metalorganic vapor phase epitaxy. These InAs nanowhiskers grow epitaxially with a growth axis parallel to the 〈111〉As dangling bond direction of the GaAs substrate surface irrespective of substrate orientation.
Yazawa et al. (Mon,) studied this question.