Cathodic Deposition of Amorphous Alloys of Silicon, Carbon, and Fluorine

Amorphous silicon containing fluorine and carbon, pure and doped with boron or phosphorus, was deposited cathodically from solutions of in acetone with . The conditions for optimum deposition were determined, and the deposits were characterized by electron microprobe x‐ray emission, electrical conductivity, and infrared absorption. Doping with phosphorus causes a change from p‐ to n‐type semiconductor behavior, with a maximum of resistivity >1013 Ω cm at the compensation point.