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Conductance quantization phenomena are observed in oxide-based resistive switching memories. These phenomena can be understood by the formation and disruption of atomic-scale conductive filaments in the insulating oxide matrix. The quantum conductance effect can be artificially modulated by controlling the electrical parameters in Set and Reset processes, and can be used for multi-level data storage and help understand and design one-dimensional structures at atomic scales in various materials systems. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
Zhu et al. (Mon,) studied this question.