We demonstrate the preparation of narrow-band porous-silicon reflectors integrated on porous-silicon layers by electrochemical etching. By carefully tuning the resulting photon cavity mode around the maximum of the porous silicon photoluminescence, we have obtained both a narrowing and enhancement of the emission line, and a highly concentrated radiation pattern. These results show that the porous silicon spontaneous emission is modified because of the coupling with the photon cavity mode.
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Pavesi et al. (1995) studied this question.