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Abstract Two-dimensional (2D) material (graphene, MoS 2 , WSe 2 , MXene, etc )/group-III nitride (GaN, AlN, and their compounds) hetero-structures have been given special attention, on account of their prospective applications in remarkable performance broadband photodetectors, light-emitting diodes, solar cells, memristors, hydrogen sensors, etc . The utilization of advantages of the above two kind materials provides a solution to the dilemma of the degradation of device performance and reliability caused by carrier mobility, contact resistance, lattice mismatch, interface, and other factors. Therefore, the summary of the recent progress of 2D material/group-III nitride hetero-structures is urgent. In this work, it elaborates on interface interaction and stimulation, growth mechanism and device physic of 2D material/group-III nitride hetero-structures. Initially, it investigates the properties of the hetero-structures, combining the theoretical calculations on interface interaction of the heterojunction with experimental study, particularly emphasizing on interface effects on the performance of hetero-materials. The structure modification (band alignments, band edge position, synergetic work function and so on) at interface contributes to the outstanding properties of these hetero-structures. Subsequently, the growth of 2D material/group-III nitride hetero-structures is introduced in detail. The problems solved by the advancing synthesis strategies and the corresponding formation mechanisms are discussed in particular. Afterwards, based on the 2D material/group-III nitride hetero-structures, extending from optoelectronics, electronics, to photocatalyst and sensors, etc , are reviewed. Finally, the prospect of 2D material/group-III nitride hetero-structures is speculated to pave the way for further promotion.
Lin et al. (Mon,) studied this question.