70-μm-Body Ga2O3 Schottky Barrier Diode With 1.48 K/W Thermal Resistance, 59 A Surge Current and 98.9% Conversion Efficiency

In this letter, we report 9-mm 2 Ga 2 O 3 Schottky barrier diodes (SBDs) with a thin-body thickness of 70 m. By implementing substrate thinning strategy and dual field plate structures, the resultant device exhibits a high forward current of 20 A, a low differential on-resistance of 57 m, a small subthreshold slope of 65 mV/dec and a decent breakdown voltage of 355 V. In particular, a robust electrothermal ruggedness is achieved, including a low junction-to-case thermal resistance of 1. 48 K/W and a high surge current of 59 A. Such superior performance is further validated by performing 150-W system-level power factor correction circuit measurements, delivering a record-high conversion efficiency of 98. 9%. These results reveal the promise of die-level structure thermal management of the Ga 2 O 3 SBDs for high-power applications.