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We report silicon delta doping in Gallium Oxide (eta-Ga2O3) grown by plasma assisted molecular beam epitaxy using a shutter pulsing technique. We describe growth procedures that can be used to realize high Si incorporation in an oxidizing oxygen plasma environment. Delta doping was used to realize thin (12 nm) low-resistance layers with sheet resistance of 320 Ohm/square (mobility of 83 cm²/Vs, integrated sheet charge of 2. 4x10¹4 cm^-2). A single delta-doped sheet of carriers was employed as a channel to realize a field effect transistor with current ID, MAX =292 mA/mm and transconductance gM = 27 mS/mm.
Krishnamoorthy et al. (Tue,) studied this question.