Femtosecond carrier dynamics in low-temperature-grown indium phosphide

This is the authors' abstract. We don't add key points for this paper.

Up-conversion luminescence and pump-probe spectroscopy are used to determine the energy distribution and recombination kinetics of photoexcited carriers in low-temperature-grown InP. The samples used are two unannealed InP films grown at 200 and 300 °C. The photoexcited carriers undergo fast trapping in less than 1 ps with recombination taking place on a much longer time scale. The carrier trapping time is found to be 500±100 fs for the 200 °C sample and 1.6±0.05 ps for the 300 °C sample and the trap photoionization cross section is estimated to be 10−16 cm2.