Scalable Compact Modeling of III–V DHBTs: Prospective Figures of Merit Toward Terahertz Operation

We investigate the bias, temperature, and frequency dependence of two III–V double heterojunction bipolar transistors technologies based on InGaAs/InP and GaAsSb/InP processes, using a HiCuM/L2 compact model-based multigeometry scalable parameter extraction methodology. Very good agreement between the model simulations and experimental data is demonstrated. Transistor currents and junction capacitances show very good scaling, thereby allowing the separation of intrinsic and peripheral effects. Prediction of future III–V HBT technologies figures-of-merit is performed by using the generated scalable model card.