We report a “Type-II” metal-organic chemical vapor deposition (MOCVD)-grown compositionally graded quaternary base InP/GaInAsSb/InP double heterojunction bipolar transistor (DHBT) with simultaneous cutoff frequencies f T /f MAX = 547/784 GHz. Compositional grading of the As/In mole fractions enables stronger quasi-electric fields in the base and favors better RF performance. Consideration of the higher bandstructure reveals new insights on the performance limits of “Type-II” DHBTs: Indium incorporation in a GaAsSb base appears to increase the efficiency of electron injection from the base into the InP collector. The present results correspond to the fastest MOCVD-grown quaternary base DHBTs reported to date for a device with f MAX > f T .
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Quan et al. (2018) studied this question.
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