The atomic geometry, chemical bonding, and surface-state eigenvalue spectra are predicted for saturated (1×{}1) ordered monolayers of Sb on the (110) surfaces of GaP, GaAs, GaSb, InP, InAs, and InSb. For GaAs and InP the predicted geometries are in good correspondence with those obtained from low-energy electron diffraction. The predicted electronic structure of these Sb-substrate systems reveals a novel type of bonding not found in either bulk III-V semiconductors or molecular III-V analogs.
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Mailhiot et al. (1984) studied this question.
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