On the thermoelastic behavior of an icosahedral quasicrystal thermoelectric thin film

In this paper, the thermoelastic behavior of an icosahedral quasicrystal thermoelectric thin film bonded to a homogeneous substrate is investigated. A one-dimensional temperature field is assumed, and the steady-state temperature distribution is obtained under applied thermal and electric loads. Adopting the perfect bonding condition and membrane assumption, the governing integral equation is established in terms of interfacial shear stress. The integral equation is numerically solved using Gauss–Chebyshev polynomials. Expressions for stresses, strains, and stress intensity factors are given. In the numerical results, a detailed study is conducted to explore the influence of the film aspect ratio, material constants, and applied thermal and electric current density loads. The results provide foundational insights into interfacial mechanics and offer design guidelines for developing reliable, high-performance quasicrystal thermoelectric film devices.