GaAs lateral nanowhiskers are grown on the side wall of a ridge formed on a GaAs substrate. The growth positions of the lateral nanowhiskers are controlled by a technique based on electron beam lithography. Also, lateral nanowhiskers bridging between two parallel wall surfaces are grown. These methods are potentially applicable to the fabrication of planar-type quantum functional devices.
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Haraguchi et al. (1996) studied this question.