Comparison of Junctionless and Conventional Trigate Transistors With L₆ Down to 26 nm

Junctionless accumulation-mode (JAM) devices with channel lengths L₆ down to 26 nm were fabricated on a trigate process and compared to conventional inversion-mode (IM) devices. This letter represents the first experimental comparison of short-channel JAM-to-IM devices at matched off-state leakage (I ₎₅₅). The JAM devices show better channel mobility (when moderately doped) and lower gate capacitance than the IM control counterparts at matched I ₎₅₅. However, the JAM devices also show reduced gate control and degraded short-channel characteristics. The observed degraded behavior of JAM relative to IM is explained with the aid of device simulations and a simple analytic model of the channel charge.