Demonstrates electrically driven resistance switching in fragmented manganite thin films, highlighting new possibilities in spintronics.
Electrical control of magnetic order remains one of the fundamental pursuits in condensed matter physics and spintronics, offering transformative potential for energy-efficient, high-density information technologies. While current-induced switching via spin-transfer and spin-orbit torques is well established in ferromagnets, electrically driving a transition between distinct magnetic phases, specifically from a ferromagnetic to an antiferromagnetic state, remains largely unexplored experimentally. Here, we demonstrate a reversible, electrically-driven inverse metamagnetic transition in an epitaxial thin film of the correlated manganite Sm1-xSrxMnO₃. Above a critical current threshold, the system abruptly switches from a low-resistance ferromagnetic state to a high-resistance antiferromagnetic-like phase. We exploit this phenomenon in nanoscale (250 × 250 nm²) spin-filter tunnel junctions based on LaNiO₃/Sm₀.₇₅Sr₀.₂₅MnO₃/ SrTiO₃/La₀.₇Sr₀.₃MnO₃ heterostructures, realizing robust, bistable resistance switching with unconventional magnetoresistance exceeding 200 %, tunable by current, temperature, and magnetic field. These findings open a phase-transition-based route for electrically driven spintronic devices beyond conventional torque-based strategies. Correlated oxides are known to exhibit metamagnetic switching from a non-ferromagnetic to ferromagnetic phase. Here, the authors demonstrate an electrically driven inverse-metamagnetic transition from a ferromagnetic state to an antiferromagnetic-like phase in an epitaxial Sm1-xSrxMnO3 thin film.
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Mondal et al. (2026) studied this question.
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