Phase Engineering of Plasma‐Enhanced Atomic Layer Deposited Molybdenum Disulfide Using High Accuracy Direct Writing With Focused Li ⁺ and Ga ⁺ Ion Beams and Ultrashort Pulse Laser

Two‐dimensional (2D) transition metal dichalcogenides (TMDCs), such as molybdenum disulfide (), have significant potential as materials for the next generation of flexible electronics. They offer advantages over conventional semiconductors, particularly due to their tunable crystal phases. However, precise control of phase transformation in 2D layers deposited using low‐temperature processes in a bottom‐up approach for future electronics has not yet been mastered, which limits their integration into scalable device technology. This study demonstrates the control of the phase composition of plasma enhanced atomic layer deposited (PEALD) films by direct writing with focused and ion beams, and retransformation into the 2H phase by ultrashort pulse laser processing. The ion beam‐treated films exhibit excellent long‐term stability and are therefore suitable for industrial processes.