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Demonstrates high recognition accuracy in neuromorphic computing devices, suggesting interlayer spacing impacts performance.
and cycling endurance over 100 cycles. These devices emulate bioinspired synaptic functions, including the transition from short-term to long-term plasticity. Cross-Sim simulations of a three-layer neural network using the device conductance characteristics achieved a recognition accuracy of 96.6% for the MNIST data set, close to the software-defined benchmark of 98.2%. Overall, these results identify interlayer spacing as an important structural parameter that regulates ion migration, resistive switching behavior, and analog conductance modulation in 2D Dion-Jacobson perovskite memristors.
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Liu et al. (2026) studied this question.
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