Finds enhanced quantum memory capabilities at room temperature, suggesting new possibilities in semiconductor technology.
Single‐electron quantum states are confined to cryogenic observation, since miniaturization amplifies fringing capacitance that masks charge quantization. Liu et al. address this with a 2D coplanar architecture suppressing fringing capacitance, achieving a non‐volatile ~0.5 V threshold shift per electron at room temperature, an order of magnitude beyond prior devices. It bridges low‐temperature single‐electron physics and practical memory operation, stabilizing and reading out quantized electronic states under ambient conditions and extending quantum memory to room‐temperature semiconductors.
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Yanrong Li (2026) studied this question.
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