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This research examines the polarization-switching dynamics and wake-up effect in Si-doped HfO2 thin films for ferroelectric memory applications.

Ferroelectric Polarization-Switching Dynamics and Wake-Up Effect in Si-Doped HfO₂

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This research examines the polarization-switching dynamics and wake-up effect in Si-doped HfO2 thin films for ferroelectric memory applications.
Analyzed polarization-switching behavior using a nucleation-limited switching model.
Employed the Monte Carlo method to simulate polarization switching considering defects.
Compared experimental results with simulations to understand the wake-up effect.
The Si-doped HfO2 thin film showed a partial increase in remnant polarization after electric field cycling.
Wake-up effect was associated with suppression of disorder in the HfO2 thin film.
Switching dynamics were characterized by a Lorentzian distribution of logarithmic domain-switching times.

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Randomized trial reveals increased remnant polarization in Si-doped HfO2 thin films, indicating improved memory potential.

Lee et al. (2018) studied this question.

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