In Situ Hole-Transport Layer Formation and Concurrent Passivation for FA 0.9 Cs 0.1 PbI ₃ Perovskite Solar Cells

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DSA processing is an effective strategy for simultaneous buried interface engineering and defect passivation in inverted perovskite solar cells, resulting in a fill factor of 77% and prolonged operational stability under continuous illumination and elevated temperature. Novelty: ClaimNovelty.METHODOLOGICAL. Consensus alignment: ConsensusAlignment.NEUTRAL.

Rashid Khan; Du Y; Junyao Gao; Meihui Song; Hua Wang; Le Chen; Zhengguo Xiao; X Y Tian

doi:10.1021/acsami.6c09672

July 25, 2026ACS Applied Materials & Interfaces

In Situ Hole-Transport Layer Formation and Concurrent Passivation for FA 0.9 Cs 0.1 PbI ₃ Perovskite Solar Cells

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Abstract

, and a fill factor of 77%. Moreover, the DSA-processed device remains operational throughout prolonged maximum power point (MPP) tracking under continuous illumination and elevated temperature. This work presents DSA as an effective strategy for simultaneous buried interface engineering and defect passivation in inverted PSCs.

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Khan et al. (2026) studied this question.

synapsesocial.com/papers/6a6a27254aab8e468f1a9d2e https://doi.org/10.1021/acsami.6c09672

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In Situ Hole-Transport Layer Formation and Concurrent Passivation for FA 0.9 Cs 0.1 PbI ₃ Perovskite Solar Cells

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In Situ Hole-Transport Layer Formation and Concurrent Passivation for FA 0.9 Cs 0.1 PbI ₃ Perovskite Solar Cells

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