Randomized trial demonstrates effective gate leakage suppression in AlGaN/GaN MIS-HEMTs, indicating improved performance.
AlGaN/GaN MIS‐HEMTs using HfO 2 gate insulator with a large dielectric constant have been fabricated. HfO 2 gate insulator was deposited by pulsed laser deposition at room temperature. It has been demonstrated that the HfO 2 gate insulator is effective in suppressing the gate leakage current keeping a large transconductance. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Kawano et al. (2007) studied this question.
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