Angle-resolved laser photoemission investigations of the laser-excited GaAs(110) surface have revealed a previously unobserved valley of the C₃ unoccupied surface band whose minimum is at X̄ in the surface Brillouin zone. Electron population in this valley increases only as a result of scattering from the directly photoexcited valley at Γ. With high momentum resolution, we have isolated the dynamic electron population changes at both Γ and X̄ and deduced the scattering time between the two valleys.
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Haight et al. (1989) studied this question.
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