Simulation of a ballistic quantum-barrier field-effect transistor based on a zigzag metallic single-wall carbon nanotube

One of the possible designs of a double-gate quantum-barrier field-effect transistor based on a metallic single-wall carbon nanotube of the zigzag type is considered. The current-voltage characteristics of the transistor with the optimal geometry are calculated in the framework of the developed combined physical and mathematical model describing the charge carrier transport in the conducting channel of the transistor taking into account both quantum-dimensional effects and phonon scattering of particles. Optimum values of the nanotube length and diameter are determined at which the maximum values of the channel conductivity and the subthreshold swing are achieved for such a transistor.