Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
July 13, 2002Chemistry of Materials

High-Brightness and Low-Voltage Light-Emitting Devices Based on Trischelated Ruthenium(II) and Tris(2,2‘-bipyridine)osmium(II) Emitter Layers and Low Melting Point Alloy Cathode Contacts

View Full Paper
Ask AI
Bookmark
Share

Authors

FGFrank GaoLaunchpad Central (United States)
Allen J. Bard
Allen J. BardNew Mexico State University

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Gao et al. (2002) studied this question.

synapsesocial.com/papers/6a6a9c9301245da06ecb3e1bhttps://doi.org/10.1021/cm020117h
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Electrochemistry in liquid sulfur dioxide. 5. Oxidation of bipyridine and phenanthroline complexes of osmium, ruthenium, and iron1984 · 59 citations
  2. 2High-efficiency organic polymer light-emitting heterostructure devices on flexible plastic substrates2000 · 107 citations
  3. 3Thin-Film Solid-State Electroluminescent Devices Based On Tris(2,2‘-bipyridine)ruthenium(II) Complexes2002 · 256 citations
  4. 4Effects of aquaregia treatment of indium–tin–oxide substrates on the behavior of double layered organic light-emitting diodes1997 · 160 citations
  5. 5The Schottky energy barrier dependence of charge injection in organic light-emitting diodes1998 · 110 citations