We report on the photoconductivity study of the individual infrared-absorbing indium nitride (InN) nanowires. Temperature-dependent dark conductivity measurement indicates the semiconducting transport behavior of these InN nanowires. An enhanced photosensitivity from 0.3 to 14 is observed by lowering the temperature from 300to10K. A calculated ultrahigh photoconductive gain at around 8×107 at room temperature is obtained from the low-bandgap nitride nanowire under 808nm excitation.
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Chen et al. (2009) studied this question.
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