The single layer chemically amplified resists are investigated for the extreme ultra-violet lithography. From the results of the sensitivity curve, the positive-tone resist based on poly (p-hydroxystyrene)-type polymers (PHS) have high sensitivities and high gamma values to the EUV exposure wavelength. Furthermore, by the optimization of both the dosage and the wafer focusing position, we succeed in replicating 0.056-μm-resist-pattern width.
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Irie et al. (2000) studied this question.
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